BICMOS TECHNOLOGY SEMINAR PDF

Technical Seminar on Bi-cmos Technology. In BiCMOS technology, both the MOS and bipolar device are fabricated on the same chip. CONTENTS Introduction Abstract Characteristics of CMOS Technology Characteristics of Bipolar Technology Combine advantages in BiCMOS Technology. Explore BiCMOS Technology with Free Download of Seminar Report and PPT in PDF and DOC Format. Also Explore the Seminar Topics.

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The p -buried layer improves the packing density, because the collector-collector spacing of the bipolar devices can be reduced. There exists a short period during the transition when both Q 1 and Q 2 are on simultaneously, thus creating a temporary current path between VDD and GND.

The output tevhnology of VDD? In steady-state operation, Q 1 and Q 2 are never on simultaneously, keeping the power consumption low. We first discuss the gate in general and then provide a more detailed discussion of the steady-state and transient characteristics, and the power consumption. These steps create linear capacitors with low levels of parasitic capacitance coupling to other parts of the IC, such as the substrate.

Discussing one is sufficient to illustrate the basic concept and properties of the gate. In this case, the nonrecurring engineering costs of designing the SOC chip and its mask set will far exceed the design cost for a system with standard programmable digital parts, standard analog and RF functional blocks, and discrete components.

Consider for instance the circuit of Figure 0. This leads to a steady-state leakage current and power consumption. Most of the techniques used in this section are similar to those used for CMOS and ECL gates, so we will keep the analysis semknar and leave the detailed derivations as an exercise. A k-gate ECL circuit, for instance, consumes 60 W for a signal swing of 0. Though additional process steps may be needed for the resistors, it may be possible to alternatively use the diffusions steps, such as the N and P implants that make up the drains and sources of the MOS devices.

Over the last decade, the integration of analog circuit blocks is an increasingly common feature of SOC development, motivated by the desire to shrink the number of chips and passives on a PC board. This happens through Z 1. Are you interested in any one of this Seminar, Project Topics.

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It comes at the expense of an increased collector-substrate capacitance. Superior matching and control of integrated components also allows for new circuit architectures to be used that cannot be attempted in multi-chip architectures. To turn off Q 1, its base charge has to be removed.

BICMOS Technology Seminar PPT and PDF Report

Consider the high level. Sincethe state-of-the-art bipolar CMOS structures have been converging. The same is also true for VOL.

A system that requires power-supply voltages greater than 3. Some of these schemes will be discussed later. The impedances Z 1 and Z 2 bicmoz necessary to remove the base charge of the bipolar transistors when they are being turned off. Then mail to us immediately to get the full report. Its resistivity is chosen so that it can support both devices.

In recent years, improved technology has made it possible to combine complimentary Yechnology transistors and bipolar devices in a single process at a reasonable cost.

BiCMOS Process Technology

Examples of analog or mixed-signal SOC devices include analog modems; broadband wired digital communication chips, such as DSL and cable modems; Wireless telephone chips that combine voice band technloogy with base band modulation and demodulation function; and ICs that function as the complete read channel for disc drives. This technology opens a wealth of new opportunities, because it is now possible to combine the high-density integration of MOS logic with the current-driving capabilities of bipolar transistors.

The high power consumption makes very large scale integration difficult. Download your Full Reports for Bicmos Technology Complementary MOS offers an inverter with near-perfect characteristics such as high, symmetrical noise margins, high input and low output impedance, high gain in the transition region, high packing density, and low power dissipation.

Various schemes have been proposed to get around this problem, resulting in gates with logic swings equal to the supply voltage at the expense of increased complexity.

For instance, during a high-to-low transition on the input, M 1 turns off first. However, this is achieved at a price. An attentive reader may notice the similarity between this structure and the TTL gate, described in the addendum on bipolar design. First of all, the logic swing of the circuit is smaller than the supply voltage. In the BiCMOS structure, the input stage and the phase-splitter are implemented in MOS, twchnology results in a better performance and higher input impedance.

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Driving PC board traces consume significant power, both in overcoming the larger capacitances zeminar the PC board and through larger signal swings to overcome signal cross talk and noise on the PC board. Analog or mixed-signal SOC integration is inappropriate for designs that will allow low production volume and low margins.

Before a high-performance analog system can be integrated on a digital chip, the analog circuit blocks must have available critical passive components, such as resistors and capacitors. For Vin high, M 1 is on. Built-in self-test functions of the analog block are also possible through the use of on-chip digital processors. The shortcomings of these elements as resistors, beyond their high parasitic capacitances, are the resistors, beyond their high parasitic capacitances, are the resistor’s high temperature and voltage coefficients and the limited control of the absolute value of the resistor.

Seminar On Bicmos Technology – ppt download

Adding these resistors not only reduces the transition times, fechnology also has a positive effect on the power consumption. The history of semiconductor devices starts in ‘s when Lienfed and Heil first proposed the mosfet. The following properties of the voltage-transfer characteristic can be derived by inspection. A single n -epitaxial layer is used to implement both the PMOS transistors and bipolar npn transistors.

Are you interested in this topic. Digital processors also allow tuning of seminaar blocks, such as centering filter-cutoff frequencies. However it took 30 years before this idea was applied to functioning devices to be used in practical applications, and up to the late this trend took a turn when MOS technology caught up and there was a cross over between bipolar and MOS semknar. Latest Seminar Topics for Engineering Students.

Therefore, turning off the devices as fast as possible is of utmost importance. The result is a low output voltage.

Download your Full Reports for Bicmos Technology.